Rapidus Corporation Announces Prototyping of 2 nm GAA Transistor Structure
Rapidus Corporation, a leading manufacturer of advanced logic semiconductors, has officially begun prototyping its 2 nm gate-all-around (GAA) transistor structure at the Rapidus Innovative Integration for Manufacturing (IIM-1) foundry. The prototype wafers are also undergoing testing to determine their electrical characteristics.
The new IIM-1 foundry by Rapidus represents a significant leap forward in semiconductor manufacturing. The company is revolutionizing the industry by implementing cutting-edge methods and technologies, including:
- Fully single-wafer front-end processing: Rapidus is pioneering the use of single-wafer processing, allowing for real-time adjustments and data collection to optimize production and increase yields.
- Extreme Ultraviolet (EUV) lithography: Rapidus is the first company in Japan to utilize advanced EUV machinery for the production of 2 nm semiconductors.
Since its inception in September 2023, Rapidus has achieved key milestones in the development of the IIM-1 foundry, culminating in the successful prototyping of 2 nm GAA transistors and the attainment of their electrical characteristics.
Rapidus is currently working on a Process Development Kit compatible with the IIM-1's 2 nm process, which will be released to advance customers by Q1 2026. Mass production is expected to begin in 2027.
